2N3906
Manufacturer:
NTE Electronics
Mfr.Part #:
2N3906
Datasheet:
Description:
BJTs TO-226-3 Through Hole PNP 625 mW Collector Base Voltage (VCBO):40 V Collector Emitter Voltage (VCEO):80 V Emitter Base Voltage (VEBO):5 V
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -65 °C |
| Number of Pins | 3 |
| Packaging | Bulk |
| RoHS | Compliant |
| Polarity | PNP |
| REACH SVHC | No SVHC |
| Max Power Dissipation | 625 mW |
| Power Dissipation | 625 mW |
| Max Collector Current | 200 mA |
| Collector Emitter Breakdown Voltage | 80 V |
| Collector Emitter Voltage (VCEO) | 80 V |
| Gain Bandwidth Product | 250 MHz |
| Collector Base Voltage (VCBO) | 40 V |
| Collector Emitter Saturation Voltage | 400 mV |
| Emitter Base Voltage (VEBO) | 5 V |
| Transistor Type | PNP |
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